Highly purified materials
Boron tribromide (Electronic Purity)
TU 20.13.52-001-15786532-2020
High purity liquid chemical compound.
Chemical formula: BBr3.
CAS number: 10294-33-4
Used as reactant for high-quality boron-doped graphene via Wurtz-type reductive coupling reaction, in semiconductor doping, semiconductor plasma etching, and photovoltaic manufacturing.
Tetrakis (trifluorophosphine) nikel
High purity liquid chemical compound.
Chemical formula: F12NiP4
It is used for deposition of nickel layers CVD process, and as a working gas in the gas centrifuge enrichment of nickel isotopes for the production of beta-voltaic current sources.
Molybdenum (VI) dichloride dioxide
High purity chemical compound in form of flakes.
Chemical formula: MoO2Cl2.
CAS number: 13637-68-8
Used for batteries and displays manufacturing.
Hexachlorodisilane (HCDS) Electronic Purity
TU 20.13.52-002-15786532-2020
High purity liquid chemical compound.
Chemical formula: Si2Cl6.
CAS number: 13465-77-5
Used for CVD, LPCVD, ALD processes of thin film deposition in semiconductor industry.
Silicon tetrachloride (Optical Purity)
TU 20.13.52-003-15786532-2020
High purity liquid chemical compound.
Chemical formula: SiCl4.
CAS number: 10026-04-7
Used for production of epitaxial structures, photovoltaic cells and other electronic components.
